Abstract Polyvinylidene fluoride (PVDF) is a polymer material that exhibits piezoelectricity, which is the ability of certain materials to generate an electric charge in response to applied mechanical stress. Electrospun nanofibers were prepared from a solution with 1800 mg PVDF (18 wt.%) powder dissolved in 7.5 ml of dimethylformamide (DMF) and 2.5 ml acetone. The experimental setup used in the electrostatic deposition process was developed in our laboratory. Atomic Force Microscopy (AFM) showed that the fibers vary from 100 nm to 200 nm. Scanning Electron Microscopy (SEM) measurements showed distributed and well-formed nanofibers, but with few incidences of beads. The Energy Dispersive Spectroscopy (EDX) results showed that all points of the formed nanofibers have very similar chemical compositions, based on carbon and fluorine. Raman and Fourier Transform Infrared (FTIR) Spectroscopic analysis revealed the characteristic bands related to β-phase in the sample, which is responsible for the piezoelectricity of PVDF.

Abstract This work reports a study of the room-temperature synthesis of a SnO2/ZnO bilayer by magnetron sputtering. Morphological, optical, and electrical properties of the bilayer were investigated for different thicknesses of SnO2. Morphology was studied using profilometry and field emission scanning electron microscopy. The optical transmittances of the ZnO films and of the SnO2/ZnO combination were high (about 80%) in the visible, and the SnO2 film did not alter the optical properties of the ZnO, which would act as a transparent contact electrode in a perovskite solar cell.

Abstract Recently, there has been growing interest in the incorporation of particles in plasma deposited thin films to creation of multifunctional surfaces. In this work a new hybrid methodology based on the plasma enhanced chemical vapor deposition (PECVD) of hexamethyldisiloxane combined to the reactive sputtering of TiO2 is proposed for the preparation of SiOxCyHz-TiO2 composite films. Specifically, the effect of the proportion of O2 in the plasma environment on the morphology, chemical structure, elemental composition, wettability, thickness and surface roughness, of the films was studied. Agglomerates of TiO2 (16-83 μm) were detected into the organosilicon matrix with the concentration of particulates growing with the percentage of oxygen in the feed. In general, there was elevation in the angle of contact of the surfaces as the oxygen supply increased. Interpretation is proposed in terms of the influence of the oxygen supply on the TiO2 sputtering rate and in the oxidation of plasma species.

Abstract In this work we discuss the wettability, chemical composition, surface morphology and optical transmittance of polyvinyl chloride (PVC) samples treated by Plasma Immersion and by Plasma Immersion Ion Implantation. The total pressure of N2 or SF6 was 6.66 Pa, for treatments of 900 s, applied rf power of 25 and 100 W, and the substrate temperature was about 298 K. In PIII, high voltage pulses of -2400 V at a cycle time of 30 µs and a frequency of 300 Hz were used. The wettability of the samples was assessed via contact angle measurements, which indicated either hydrophilicity or hydrophobicity, depending on the plasma composition. X-ray Photoelectron Spectroscopic analysis confirmed strong fluorine attachment to the surface after treatments using SF6 plasmas, and the presence of oxygen after treatments using nitrogen plasmas. Atomic Force Microscopy images showed that the roughness Rrms, depends on the plasma conditions. Optical transmittance in the visible region, T (λ), was increased by plasma immersion. The greatest contact angle observed was 142º (PI cathode), while the highest roughness was 213.2 nm. The highest optical transmittance in the visible region was around to 90% (PI anode).

This study reports the structural properties of zinc oxide thin films co-doped with aluminum and nitrogen (ZnO:Al-N) grown by RF magnetron sputtering from an AZO (ZnO with 2 wt% Al2O3) target under nitrogen (N2) atmosphere at room temperature (RT). Nitrogen partial pressures of 0.00, 0.10, 0.25 and 1.00 mTorr were used. The film thickness was around 270 nm. Ultraviolet-Vis-NIR transmittance (T) spectra of the films revealed T values of 80 to 85% in the 400 to 700 nm wavelength range. XRD results indicated that the films had a hexagonal wurtzite structure and were preferentially oriented in the (002) plane. Analyses by EDS indicated that the N atoms tend to be incorporated into the ZnO matrix at the expense of oxygen atoms. The ideal [N]/[Al] was obtained at a N2 partial pressure of 0.25 mTorr, producing a p-type film. For a [N]/[Al] of 1.53, the film also exhibited p-type conduction with an electrical resistivity of 31.92 Ω cm, mobility of 18.65 cm2/V s and carrier density of 1.22 x 1016 cm-3. The low carrier density is attributed to the energetically favorable formation of inactive nitrogen phases instead of acceptor-receiver-acceptor complexes, even at the ideal [N]/[Al].

Aluminum zinc oxide (AZO) thin films were synthesized on glass substrates by radio frequency (rf) magnetron sputtering from a metallic Zn-Al (5 at. %) target at room temperature. The morphological, structural, electrical and optical properties of the films were studied as a function of the sputtering pressure, which was varied from 0.1 to 6.7 Pa. X-ray diffraction (XRD) analyses revealed that the films obtained were polycrystalline, having a hexagonal wurtzite structure with a preferential orientation in the (002) plane. In addition, the crystallite size increased as a function of sputtering pressure. Owing to the re-sputtering of the Zn atoms from the growing film, the aluminum concentration presented a maximum value of 13 at. %. At pressures close to 0.16 Pa, we obtained films with values of electrical resistivity and mobility of 2.8 10-3 Ω cm and 17 cm2/Vs, respectively. Finally, our results indicate that the structure zone diagram proposed by Thornton and later modified by Kluth does not fully predict the structural/morphological behavior of the AZO films, since plasma interactions must also be taken into account. With the methodology used, transparent conductive electrodes can be deposited on substrates at low temperatures.

In this work, the surface and electrical characteristics ZnO:Al thin films deposited by RF magnetron sputtering onto glass substrates have been investigated. Analysis of surface morphologies revealed two growth stages. In the first stage, up to thicknesses of 100 nm, the films show surface structures with a granular form without preferential orientation. Beyond thicknesses of 100 nm, however, the grain structures increase in size and height, producing a pyramidal form and preferred orientation along the c-axis. The XRD results show that the films have a preferred orientation in the (002) plane. Furthermore, with the evolution of the film thickness the electrical resistivity decreases to a minimum of 1.6 × 10- 3 Ω cm for the film of 465 nm thickness. The doping with aluminum atoms produces an increase in concentration of charge carriers to around 8.8 × 10(19) cm- 3. All films exhibit high optical transmittance (above 85%) in the visible region.

During the extraction of aluminum from bauxite, a waste of oxides containing traces of heavy metals in a highly alkaline matrix, called Red Mud (RM), is produced. In this study RM is characterized and the feasibility of using it as a precursor for the production of thin films by Plasma Sputtering and by Plasma Immersion Ion Implantation and Deposition (PIIID) is demonstrated. The chemical structure and composition, surface morphology, topography, and wettability of the films prepared using such methodologies were investigated. The films consist mainly of the elements aluminum, silicon, iron and carbon. Infrared spectroscopic analyses reveal the presence of C=O, C-H2, Fe(OH), Al-O and Si-C functionalities. RF Sputtering produced films with smoother surfaces, whereas PIIID produced granular surface structures. Surface contact angle measurements showed that despite the presence of oxides and hydroxides, the films are hydrophobic, thus exhibiting an interesting link between the physical and thermodynamical properties.